NDLI: 1-Mb memory chip using giant magnetoresistive memory cells

Content Provider	IEEE Xplore Digital Library
Author	Brown, J.L. Pohm, A.V.
Copyright Year	1994
Abstract	A 1-Mb nonvolatile, nondestructive readout M-R memory chip using elements with Giant Magnetoresistance Ratio (GMR) material has been designed. The chip employs dual redundancy, CMOS drive electronics with minimum gate lengths of 0.8 microns, two metal layers, and a 5-V /spl plusmn/10% power supply. The layout has an area of 0.9 cm sq, and approximately 50% of the chip area is devoted to the memory cell array. The memory chip is designed around 1.4 /spl mu/m/spl times/6.1 /spl mu/m, 80-/spl Omega/ elements using GMR material; the elements are spaced 1.4 /spl mu/m apart. The material is composed of two 50-/spl Aring/ ternary alloy layers separated by 30 /spl Aring/ of copper and has a nominal M-R coefficient of 6.0%. Minimum read signal is /spl plusmn/2.5 mV; sense current is 2.5 mA; work current is /spl plusmn/30 mA; and input and output is 4b wide. The memory employs a new read scheme in which two-phase sensing is employed. The scheme provides a sensitive, stable output and diminishes the array area by a factor of two, at the expense of read access time. The design contains over 700000 transistors and over 2 million memory cells; a prototype 64 K section of this design has been built, but the full design has yet to be constructed on silicon. The design demonstrates that with GMR memory cells, M-R memories can be designed with densities and speeds comparable to dynamic RAM's.<>
Sponsorship	Ericsson IEEE Components, Packaging and Manufacturing Technology Society
Starting Page	373
Ending Page	379
Page Count	7
File Size	651028
File Format	PDF
ISSN	10709886
Volume Number	17
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-09-01
Publisher Place	U.S.A.
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Giant magnetoresistance Random access memory Magnetic materials Nonvolatile memory Magnetization Power supplies Copper alloys Prototypes Silicon Solid state circuits
Content Type	Text
Resource Type	Article
Subject	Engineering

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