NDLI: Characterization of the cell leakage of a stacked trench capacitor (STT) cell

Content Provider	IEEE Xplore Digital Library
Author	Hamamoto, T. Sawada, S.
Copyright Year	1963
Abstract	The cell leakage of a stacked trench capacitor (STT) cell has been investigated. The major leakage mechanisms of the STT are trench-to-trench leakage, trench junction leakage, and LOCOS isolation leakage. It is shown that compared to a conventional trench capacitor, the trench-to-trench leakage current is reduced and high punchthrough voltage is obtained. Therefore, the trench-to-trench spacing can be reduced 0.1 /spl mu/m shorter than that of the trench capacitor. These reductions result from the STT structure itself. The surface leakage current, which is the dominant leakage current in the trench capacitor, does not flow in the STT. This paper also describes the effect of the sidewall damage caused by trench etching on the trench junction leakage. Reactive ion etching (RIE) produces deep levels just beneath the trench surface. But, the trench junction of the STT is not influenced by these deep levels because the trench surface is covered by a n/sup -/diffused layer. This paper also investigates the relationship between the cell leakage and the retention time. At DRAM operation temperatures, LOCOS isolation leakage is dominant rather than trench junction leakage. Therefore, the deeper trench can increase the storage capacitance and improve the retention time.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1801
Ending Page	1805
Page Count	5
File Size	540687
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage current Surface topography Random access memory Etching Capacitance Voltage MOS capacitors Temperature MOSFETs Silicon
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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