NDLI: Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface

Content Provider	IEEE Xplore Digital Library
Author	Tean-Sen Jen Jen-Wei Pan Nerng-Fu Shin Jyh-Wong Hong Chun-Yen Chang
Copyright Year	1963
Abstract	In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-SiC:H TFLED's with various optical gaps of BL had been fabricated and characterized. In addition, a composition-graded n/sup +/-layer was used to reduce its series and contact resistances to the Al electrode and hence the EL threshold voltage (V/sub th/) of an a-SiC:H BL TFLED. The highest obtainable brightness of an a-SiC:H BL TFLED was 342 cd/m/sup 2/ at an injection current density of 600 mA/cm/sup 2/ and the lowest EL V/sub th/ achievable was 6.0 V. The current-conduction mechanism of an a-SiC:H BL TFLED had also been investigated. Within the lower applied-bias region, it showed an ohmic current, while within the higher applied-bias region, a space-charge-limited current (SCLC) was observed.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1761
Ending Page	1769
Page Count	9
File Size	937224
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electroluminescence Electroluminescent devices Amorphous silicon PIN photodiodes Semiconductor thin films Light emitting diodes Electrodes Threshold voltage Brightness Current density
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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