NDLI: Two-dimensional energy-dependent models for the simulation of substrate current in submicron MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Agostinelli Jr., V.M. Bordelon, T.J. Xiaolin Wang Hasnat, K. Choh-Fei Yeap Lemersal Jr., D.B. Tasch, A.F. Maziar, C.M.
Copyright Year	1963
Abstract	Two-dimensional energy-dependent substrate current models are described for NMOS and PMOS devices that have been developed using a multi-contour approach. The new models offer a significant improvement in the calculation of substrate current due to a more accurate calculation of the average energy as compared to the local-field model. The models are implemented in a post-processing manner by applying a one-dimensional energy conservation equation to each of many current contours in order to generate a two-dimensional representation of average energy and impact ionization rate, that is then integrated to calculate the substrate current. The new models have been compared to substrate current characteristics of a variety of NMOS and PMOS devices for a wide range of bias conditions and channel lengths, and very good agreement has been obtained with a single set of model parameters. An additional significance of this work is the enhancement of the standard multi-contour model by an energy-sink term that results in an improved prediction of the impact ionization process in PMOSFET's.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	1784
Ending Page	1795
Page Count	12
File Size	1130120
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	10
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-10-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Impact ionization Substrates Hot carriers MOS devices Steady-state Equations Energy conservation Predictive models Interface states
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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