NDLI: DC, RF, and noise characteristics of carbon-doped base InP/InGaAs heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Hong, B.W.-P. Jong-In Song Palmstrom, C.J. Van der Gaag, B. Kyung-Bae Chough Hayes, J.R.
Copyright Year	1963
Abstract	The first successful demonstration of high-performance InP/InGaAs heterojunction bipolar transistors utilizing a highly carbon-doped base is reported. The detailed device characteristics including dc, RF, and noise performance have been investigated. For the first time base layers free of hydrogen passivation have been obtained using chemical beam epitaxy. The HBT's showed almost ideal dc characteristics; a gain independent of collector current, a near unity ideality factor, a very small offset-voltage, and a high breakdown voltage. Devices having two 1.5 /spl mu/m/spl times/15 /spl mu/m emitter fingers exhibited a maximum f/sub T/ of 115 GHz and f/sub max/ of 52 GHz. The device also exhibited a minimum noise figure of 3.6 dB and associated gain of 13.2 dB at a collector current level of 2 mA where a f/sub T/ of 29 GHz and f/sub max/ of 23 GHz were measured. The nearly ideal dc characteristics, excellent speed performance, and RF noise performance demonstrate the great potential of the carbon-doped base InP/InGaAs HBT's.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	19
Ending Page	25
Page Count	7
File Size	784898
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radio frequency Indium phosphide Indium gallium arsenide Heterojunction bipolar transistors Hydrogen Passivation Chemicals Molecular beam epitaxial growth Epitaxial growth Fingers
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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