NDLI: Comparison of semiconductor transport models using a Monte Carlo consistency test

Content Provider	IEEE Xplore Digital Library
Author	Ramaswamy, S. Tang, T.
Copyright Year	1963
Abstract	This paper proposes a scheme to compare different transport models which are used to simulate submicron semiconductor devices. The procedure requires self-consistent Monte Carlo simulation data for a particular test device. We have compared four different hydrodynamic transport models which have been proposed recently. All four sets of hydrodynamic equations can be cast into a single form by selecting appropriate models for various transport parameters. The advantage is that we can use the same discretized set of equations to implement different transport models. We have also compared the results obtained from the Monte Carlo consistency test with those obtained by the hydrodynamic equation solver. The consistency test has been used to highlight the merits and demerits of the transport models on a common platform.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	76
Ending Page	83
Page Count	8
File Size	631745
File Format	PDF
ISSN	00189383
Volume Number	41
Issue Number	1
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1994-01-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Monte Carlo methods Semiconductor device testing Hydrodynamics Poisson equations Automatic testing Differential equations Silicon High definition video Conductors Senior members
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

An improved hydrodynamic transport model for silicon

Formulation of a tail electron hydrodynamic model based on Monte Carlo results

Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices-Part I: transport equations

A comparison of Monte Carlo and cellular automata approaches for semiconductor device simulation

Three-dimensional semiconductor device simulation by finite element method coupled to Monte Carlo method

Monte Carlo study of electron transport in silicon inversion layers

Transport models for advanced device simulation-truth or consequences?

Implementation of a numerical method for quantum Drift-Diffusion Equations

An assessment of approximate nonstationary charge transport models used for GaAs device modeling

Comparison of semiconductor transport models using a Monte Carlo consistency test

Similar Documents

An improved hydrodynamic transport model for silicon

Formulation of a tail electron hydrodynamic model based on Monte Carlo results

Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices-Part I: transport equations

A comparison of Monte Carlo and cellular automata approaches for semiconductor device simulation

Three-dimensional semiconductor device simulation by finite element method coupled to Monte Carlo method

Monte Carlo study of electron transport in silicon inversion layers

Transport models for advanced device simulation-truth or consequences?

Implementation of a numerical method for quantum Drift-Diffusion Equations

An assessment of approximate nonstationary charge transport models used for GaAs device modeling

Comparison of semiconductor transport models using a Monte Carlo consistency test