NDLI: High-speed InP/InGaAs heterojunction bipolar transistors

Content Provider	IEEE Xplore Digital Library
Author	Chau, H.-F. Beam III, E.A.
Copyright Year	1980
Abstract	Very-high-performance common-emitter InP/InGaAs single heterojunction bipolar transistors (HBTs) grown by metalorganic molecular beam epitaxy (MOMBE) are reported. They exhibit a maximum oscillation frequency (f/sub T/) of 180 GHz at a current density of 1*10/sup 5/ A/cm/sup 2/. this corresponds to an (R/sub B/C/sub BC/)/sub eff/=f/sub T//(8 pi f/sup 2//sub max/) delay time of 0.12 ps, which is the smallest value every reported for common-emitter InP/InGaAs HBTs. The devices have 11 mu m/sup 2/ total emitter area and exhibit current gain values up to 100 at zero base-collector bias voltage. The breakdown voltage of these devices is high with measured BV/sub CEO/ and BV/sub CEO/ of 8 and 17 V, respectively.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	388
Ending Page	390
Page Count	3
File Size	295157
File Format	PDF
ISSN	07413106
Volume Number	14
Issue Number	8
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1993-08-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Indium gallium arsenide Heterojunction bipolar transistors Molecular beam epitaxial growth Cutoff frequency Voltage Gallium arsenide Substrates Wet etching Phase noise
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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