NDLI: Co-60 and neutron irradiation of MOS-controlled thyristors

Content Provider	IEEE Xplore Digital Library
Author	Loescher, D.H. Dawes Jr., W.R. King, D.B.
Copyright Year	1963
Abstract	The authors report changes in MOS-controlled thyristor (MCT) performance caused by irradiation with fast neutrons (E>1 MeV) and with Co-60 gamma rays. The results are significant because the MCT is representative of a growing class of power devices that combine bipolar and field-effect-transistor (FET) technologies and because MCTs are being considered for use in systems that must survive exposure to radiation. The MCTs tested, which were designed to hold off 400 V and carry 50 A, were operable with +or-10-V control voltages after they received a total dose of 1 Mrad(Si), but they could not be turned on after exposure to 1E12 n/cm/sup 2/. This observation is consistent with calculations of the effects of neutron fluence on minority-carrier transport in the MCT. The observed shifts with total dose of V/sub on/ and, at least in part, of V/sub bias/ are consistent with the known behavior of p-channel and n-channel polysilicon gate FETs.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2411
Ending Page	2414
Page Count	4
File Size	296088
File Format	PDF
ISSN	00189499
Volume Number	36
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Neutrons Thyristors MOSFETs FETs Voltage control Circuit testing Laboratories Gamma rays Forward contracts Threshold voltage
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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