NDLI: Radiation hardened micron and submicron MOSFETs containing fluorinated oxides

Content Provider	IEEE Xplore Digital Library
Author	Nishioka, Y. Ohyu, K. Ohji, Y. Kato, M. da Silva Jr., E.F. Ma, T.P.
Copyright Year	1963
Abstract	The generation of interface traps and oxide trapped charge in fluorinated MOSFETs and MOS capacitors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine is introduced by low-energy F implantation into the surface layer of the polycrystalline silicon gate electrode, followed by annealing at 950 degrees C to diffuse F into the gate SiO/sub 2/, toward the SiO/sub 2//Si interface The improved interface radiation hardness is attributed to the strain relaxation near the SiO/sub 2//Si interface due to fluorine incorporation. An optimum F implant dose has been found to exist for a given technology; in the present case the optimum dose appears to be 2*10/sup 15/ cm/sup -2/. The results demonstrate the potential of the technique for producing radiation hard micron and submicron MOS devices.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2116
Ending Page	2123
Page Count	8
File Size	702426
File Format	PDF
ISSN	00189499
Volume Number	36
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Radiation hardening MOSFETs Silicon Implants MOS devices Oxidation MOS capacitors Annealing Surface treatment Electrodes
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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