NDLI: The effect of neutron irradiation on silicon photodiodes

Content Provider	IEEE Xplore Digital Library
Author	Korde, R. Ojha, A. Braasch, R. English, T.C.
Copyright Year	1963
Abstract	Neutron radiation testing was performed on a total of 125 silicon photodiodes to investigate the changes in the device parameters after neutron exposure. A californium-252 source was used to irradiate the photodiodes with 1-MeV equivalent neutrons having fluences in the range of 5*10/sup 11/ to 10/sup 14/ n/cm/sup 2/. The photodiode forward voltage drop, ideality factor, and series resistance increased after neutron exposure. The increased series resistance caused a degradation in diode photocurrent linearity. An empirical expression for post-neutron-irradiation changes in photodiode linearity is presented. Neutron-induced changes in the photodiode shunt resistance and dark current were modeled using simple expressions that allow device designers to estimate changes in photocurrent linearity, shunt resistance, and dark current after neutron exposure. No postirradiation change in the ultraviolet quantum efficiency of diodes without recombination in the front region was observed. This suggests that neutron irradiation does not affect the Si-SiO/sub 2/ interface recombination velocity of p-n junction diodes.<>
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2169
Ending Page	2175
Page Count	7
File Size	609728
File Format	PDF
ISSN	00189499
Volume Number	36
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Neutrons Silicon Photodiodes Diodes Linearity Photoconductivity Dark current Radiative recombination Testing Performance evaluation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Experimental Determination of Gain Degradation Mechanisms

Neutron Damage Failure Rates for Large Populations

The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

Effects of neutron irradiation on current gain and noise in silicon avalanche photodiodes

A new model for generation-recombination in silicon depletion regions after neutron irradiation

Soft X-Ray silicon photodiodes with 100% quantum efficiency

Neutron irradiation effects on standard and oxygenated silicon diodes

Radiation sensitivity of light emitting diodes (LED), laser diodes (LD) and photodiodes (PD)

Bilateral PIN Diode for Fast Neutron Dose Measurement

The effect of neutron irradiation on silicon photodiodes

Similar Documents

Experimental Determination of Gain Degradation Mechanisms

Neutron Damage Failure Rates for Large Populations

The influence of structural characteristics on the response of silicon avalanche photodiodes to proton irradiation

Effects of neutron irradiation on current gain and noise in silicon avalanche photodiodes

A new model for generation-recombination in silicon depletion regions after neutron irradiation

Soft X-Ray silicon photodiodes with 100% quantum efficiency

Neutron irradiation effects on standard and oxygenated silicon diodes

Radiation sensitivity of light emitting diodes (LED), laser diodes (LD) and photodiodes (PD)

Bilateral PIN Diode for Fast Neutron Dose Measurement

The effect of neutron irradiation on silicon photodiodes