NDLI: Indium channel implants for improved MOSFET behavior at the 100-nm channel length regime

Content Provider	IEEE Xplore Digital Library
Author	Shahidi, G.G. Antoniadis, D.A. Smith, H.I.
Copyright Year	1963
Abstract	Summary form only given. The authors report on the use of indium as an alternative channel implant in MOSFETs. Indium has an atomic weight of 115, and the implant peak can be placed with tens of nanometers of the surface. The profile is skewed toward the bulk, resulting in a very low surface concentration. Deep-submicrometer-channel-length devices with oxide thickness of 2.5 nm were fabricated using X-ray lithography and indium channel implants from 100 keV to 300 keV, keeping the dose constant at 10/sup 13/ cm/sup -2/. Activation of the indium implant was achieved by rapid thermal annealing (5 s at 1050 degrees C). As expected, low indium implant energies result in high device threshold voltage (up to 0.33 V for L=0.15 mu m and up to 0.24 V for L=0.1 mu m). Turn-off characteristics were excellent (subthreshold slope=80 mV/dec for L=0.15 mu m and 100 mV/dec for L=0.1 mu m, at V/sub DS/=1 V). Low-field mobility for indium-doped channels was about 380 cm/sup 2//V-s (as compared to 420 for boron doped channels), and no degradation in mobility was observed as implant energy was reduced. A reduction in normalized substrate current is observed in indium-implanted channels for very short channel lengths.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2605
File Size	163947
File Format	PDF
ISSN	00189383
Volume Number	36
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium Implants MOSFET circuits X-ray lithography Rapid thermal annealing Threshold voltage Boron Degradation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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