NDLI: The influence of electric field and mobility profile on GaAs MESFET characteristics

Content Provider	IEEE Xplore Digital Library
Author	Chen, C.-H. Arch, D.K.
Copyright Year	1963
Abstract	Analytical approximations for the drain I-V relationship, including the mobility profile and field distribution in the channel from the drain to the source, and GaAs MESFETs are derived. The model includes the extended depletion from the gate to the drain for nonself-aligned devices. The calculation of the electric field along the channel is in very good agreement with existing analytical models and a two-dimensional numerical simulation. Experimentally, the authors fabricated and tested tilted angle lightly doped drain (LDD) GaAs MESFETs. It was found that the LLD MESFET structure suppresses the peak electric field under the gate near the drain region. A lower output conductance and higher drain-to-source breakdown were observed as expected. In addition to the electric field, the mobility profile is another factor that influences the performance of the devices. The accuracy of describing the low-field transconductance is strongly dependent on the mobility profile. Moreover, the mobility profile modifies the electric field along the channel and also influences the shape of the drain I-V curves. It is found that more accurate I-V curves can be obtained once the mobility profile is taken into account.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2405
Ending Page	2414
Page Count	10
File Size	891194
File Format	PDF
ISSN	00189383
Volume Number	36
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium arsenide MESFETs Analytical models Numerical simulation Testing Electric breakdown Transconductance Shape
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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