NDLI: A study of the increased effects of hot-carrier stress on NMOSFETs at low temperature

Content Provider	IEEE Xplore Digital Library
Author	Acovic, A. Dutoit, M. Ilegems, M.
Copyright Year	1963
Abstract	Summary form only given. It is well known that hot-carrier (HC) degradation of NMOSFETs is enhanced at low temperature (LT). Up to now, this has mainly been attributed to the greater mean free path of carriers at LT, which acquire more kinetic energy between two scattering events. It is shown that this is not the unique cause. It is demonstrated that the same density of HC generated defects modifies the electric characteristics of NMOSFETs at 77 K much more than it does at 300 K. There exist several possible explanations for the observed enhancement of degradation at LT: (1) the effect of Coulomb scattering by tapped charges on mobility degradation is relatively more important at LT; and (2) since at LT the Fermi level is closer to the conduction band in strong inversion, acceptor interface state levels near the conduction band are more populated with electrons. From simulations, it is concluded that (1) substantially enhances the effects of stress at LT, while (2) has no effect in weak inversion. Measurements show that the operating voltage of devices that work at 77 K should be reduced even when they are occasionally operating at 300 K.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2603
File Size	167587
File Format	PDF
ISSN	00189383
Volume Number	36
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1989-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hot carriers Hot carrier effects Stress MOSFETs Temperature Degradation Scattering Kinetic energy Character generation Electric variables
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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