NDLI: Titanium silicide interconnect technology for submicrometer DRAMs

Content Provider	IEEE Xplore Digital Library
Author	Fukumoto, M. Yoshida, T. Tateiwa, K. Ohzone, T.
Copyright Year	1963
Abstract	A self-aligned titanium silicide interconnect structure, in which the silicide wire on the isolation oxide is connected with the silicided diffusion layer directly without any contact holes, is discussed. The interconnection is fabricated by using the simultaneous reaction of Ti with the patterned amorphous Si and single-crystalline Si substrate through Si/sup +/ ion-beam interface mixing, rapid thermal annealing at 625 degrees C, and subsequent furnace annealing at 900 degrees C. Here, the physical cross section of the interconnection is clarified and the properties of titanium silicide obtained by this technology are discussed. As an application of this interconnect technology, a bit-line contact structure on a trench-type DRAM (dynamic random-access memory) cell where an Al/bit line contacts the diffusion layer through the titanium silicide pad is proposed. The effectiveness of introducing this pad in the memory cell is also discussed.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2328
Ending Page	2332
Page Count	5
File Size	563945
File Format	PDF
ISSN	00189383
Volume Number	35
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Titanium Silicides Random access memory Integrated circuit interconnections Tin Substrates Very large scale integration Amorphous materials Ion beams Rapid thermal annealing
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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