NDLI: Quantum well p-channel AlGaAs/InGaAs/GaAs devices for complementary heterostructure FET applications

Content Provider	IEEE Xplore Digital Library
Author	Ruden, P.P. Daniels, R.R. Shur, M.S. Grider, D. Nohava, T. Arch, D.K. Cirillo Jr., N.C.
Copyright Year	1963
Abstract	The low extrinsic transconductance of the p-channel self-aligned gate heterostructure insulated gate FETs (HIGFETs), resulting from low hole mobility and high source resistance, has limited the performance of these devices. Results are presented for such devices fabricated on an AlGaAs/InGaAs/GaAs strained quantum-well structure. Transconductance, transconductance parameter, and maximum drain current as high as 113 mS/mm, 305 mS/V/mm, and 94 mA/mm, respectively, were achieved in 0.8- mu m devices at room temperature. At 77 K 181 mS/mm, 800 mS/V/mm, and 180 mA/mm, respectively, were obtained in 1- mu m devices. The highest hole field effect mobilities deduced from the device data are 860 and 2815 cm/sup 2//V at room temperature and 77 K, respectively. These device parameters are believed to be the best reported to date, suggesting that a viable complementary heterostructure FET technology based on this structure can be realized.<>
Sponsorship	IEEE Electron Devices Society
Starting Page	2440
File Size	151731
File Format	PDF
ISSN	00189383
Volume Number	35
Issue Number	12
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1988-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium gallium arsenide Gallium arsenide FETs Transconductance Temperature Signal processing Laboratories Digital circuits Insulation Logic circuits
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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