NDLI: Hot-electron-induced degradation in MOSFET's at 77 K

Content Provider	IEEE Xplore Digital Library
Author	Bracchitta, J.A. Honan, T.L. Anderson, R.L.
Copyright Year	1963
Abstract	Hot-electron-induced degradation of transconductance and of threshold voltage at 77 K of n-channel enhancement metal-gate MOSFET's was investigated as a function of electrical stress applied at liquid nitrogen temperature. After stress, the threshold voltage was found to have increased at low drain voltages but to have remained unchanged at higher drain voltages, and the saturation transconductance was virtually unchanged for operation in the normal mode. For operation in the inverse mode (source and drain interchanged), the threshold voltage was found to have increased, independent of drain voltage, while the saturation transconductance was decreased. The threshold voltage for inverted operation increased monotonically with stress time, while the saturation transconductance decreased initially and then saturated. This saturation corresponds to an order of magnitude decrease in carrier mobility in the channel near the drain. These results are interpreted using a model in which the threshold voltage and channel mobility are position-dependent. While hot-electron-induced degradation may not be a problem for devices operated only in the forward saturation region, it could be a serious problem for devices such as bilateral switches.
Sponsorship	IEEE Electron Devices Society
Starting Page	1850
Ending Page	1857
Page Count	8
File Size	848957
File Format	PDF
ISSN	00189383
Volume Number	32
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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