NDLI: Width dependence of substrate and gate currents in MOSFET's

Content Provider	IEEE Xplore Digital Library
Author	Tong-Chern Ong Simon Tam Ping-Keung Ko Cheming Hu
Copyright Year	1963
Abstract	Width dependence of hot-electron currents in MOSFET's fabricated with LOCOS, non-LOCOS, and a modified LOCOS processes are studied. The experimental results show that the substrate and gate currents are apparently enhanced in narrow width devices. The enhancement, however, is due to different voltage drops across the source-drain series resistance. The voltage drops are usually larger in wider devices. After correcting for the resistance effect, the substrate and gate currents scale with the device width. With this typical LOCOS process, the bird's beak and in-diffusion of field implant dopants do not cause excess hot-electron activities along the channel/field edges as has been suspected. Some other LOCOS process could, of course, produce a different result. Studies using wide test devices must consider the series resistance effect. With this precaution taken, models derived from wide-channel data will be applicable to narrow-channel devices, at least for some processes.
Sponsorship	IEEE Electron Devices Society
Starting Page	1737
Ending Page	1740
Page Count	4
File Size	519520
File Format	PDF
ISSN	00189383
Volume Number	32
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1985-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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