NDLI: DC thermal model of semiconductor device produces current filaments as stable current distributions

Content Provider	IEEE Xplore Digital Library
Author	Olson, H.M.
Copyright Year	1963
Abstract	How current filaments arise in semiconductor devices can be studied with the aid of a simple two-dimensional thermal model. This dc model generates temperature and current distributions across the semiconductor chip. To use the model one must be able to prescribe the temperature dependence of the dc conductance in the chip from prior knowledge of the conduction mechanism. This model produces current filaments as stable current distributions. Moreover it demonstrates that current filaments will form in avalanche diodes at high power levels even if the chips are defect-free. The key to filament formation in a semiconductor device is an increase of the dc conductance with temperature at some operating point. In avalanche conduction, when the diode bulk leakage current increases faster than the avalanche current multiplication factor decreases with temperature, the avalanche conductance begins to rise. When this happens, a current filament forms raising the temperature locally to more than 1600°C, according to the model, and results in diode burnout. This mechanism is believed to be involved also in RF-induced burnout of avalanche diodes and in the burnout of other semiconductor devices.
Sponsorship	IEEE Electron Devices Society
Starting Page	1177
Ending Page	1184
Page Count	8
File Size	848920
File Format	PDF
ISSN	00189383
Volume Number	24
Issue Number	9
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1977-09-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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