NDLI: Model and analysis of gate leakage current in ultrathin nitrided oxide MOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Jonghwan Lee Bosman, G. Green, K.R. Ladwig, D.
Copyright Year	1963
Abstract	An analytical model of the gate leakage current in ultrathin gate nitrided oxide MOSFETs is presented. This model is based on an inelastic trap-assisted tunneling (ITAT) mechanism combined with a semi-empirical gate leakage current formulation. The tunneling-in and tunneling-out current are calculated by modifying the expression of the direct tunneling current model of BSIM. For a microscopic interpretation of the ITAT process, resonant tunneling (RT) through the oxide barrier containing potential wells associated with the localized states is proposed. We employ a quantum-mechanical model to treat electronic transitions within the trap potential well. The ITAT current model is then quantitatively consistent with the summation of the resonant tunneling current components of resonant energy levels. The 1/f noise observed in the gate leakage current implies the existence of slow processes with long relaxation times in the oxide barrier. In order to verify the proposed ITAT current model, an accurate method for determining the device parameters is necessary. The oxide thickness and the interface trap density of the gate oxide in the 20-30 /spl Aring/ thickness range are evaluated by the quasi-static capacitance-voltage (C-V) method, dealing especially with quantum-mechanical and polysilicon effects.
Sponsorship	IEEE Electron Devices Society
Starting Page	1232
Ending Page	1241
Page Count	10
File Size	415916
File Format	PDF
ISSN	00189383
Volume Number	49
Issue Number	7
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2002-07-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Leakage currents Tunneling Semiconductor device modeling Semiconductor device noise Random noise MOSFETs Semiconductor device reliability
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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