NDLI: Hardening of Solar Cells against Low-Energy Rear-Incident Protons

Content Provider	IEEE Xplore Digital Library
Author	Fischer, C. J. Kalma, A. H.
Copyright Year	1963
Abstract	The damage mechanisms resulting from normally incident low-energy proton irradiation on the back side of standard n/p silicon solar cells have been investigated, and an evaluation was performed of cells modified to better withstand back irradiation. The damage effects produced by the low-energy rear-incident protons resulted in the formation of an additional junction at the back contact and an increase in effective series resistance, indicating the removal of majority carriers at the damaged region. The proton irradiation caused an injection level dependence of the spectral response; the spectral response degradation at high injection levels was greater than at low injection levels. The results of the evaluation of the modified cells indicate that the n/p solar cells with a p+-doped-back surface are less sensitive to normally rear-incident low-energy proton irradiation. Sensitivity to this type radiation also decreases with increasing cell thickness.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2681
Ending Page	2684
Page Count	4
File Size	705687
File Format	PDF
ISSN	00189499
Volume Number	22
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Protons Sun Electrical resistance measurement Silicon Contact resistance Degradation Radiation hardening Voltage Performance evaluation
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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