NDLI: Monte Carlo Analysis of Dose Profiles near Photon Irradiated Material Interfaces

Content Provider	IEEE Xplore Digital Library
Author	Garth, J. C. Chadsey, W. L. Sheppard, R. L.
Copyright Year	1963
Abstract	Dose profiles in silicon and polyethylene next to gold-silicon and gold-polyethylene interfaces, due to x-rays of energies between 10 and 2000 keV, have been calculated using the POEM Monte Carlo electron transport code. By calculating separately the transport of Compton, K-, M-and L-photoelectric, and Auger electrons generated in the gold, each contribution to the total energy fluence profile was obtained and fit to the functional form A exp (Bx+Cx2+Dx3). Differentiating this form and summing over all source contributions led to excellent analytic representations of the dose profile next to gold for energies below 200 keV. Above 200 keV the dose profiles for two directions of photon irradiation were obtained by the method of Chadsey. Curves of relative dose and relative mean dose as a function of x-ray energy for several distances from the interface were calculated for the first time.
Sponsorship	IEEE Nuclear and Plasma Sciences Society Computer Applications in Nuclear and Plasma Sciences (CANPS) Lawrence Berkeley Lab. Lawrence Livermore Nat. Lab. APS College of William and Mary Continuous Electron Beam Accelerator Facility NASA Defence Nuclear Agency Sandia National Laboratories Jet Propulsion Laboratory Brookhaven Nat. Lab. Lawrence Livermore Nat. Lab IEEE/NPPS Radiat. Effects Committee Defence Nuclear Agency/DoD Sandia National Laboratories/DOE Jet Propulsion Laboratory/NASA Phillips Lab./DoD
Starting Page	2562
Ending Page	2567
Page Count	6
File Size	984581
File Format	PDF
ISSN	00189499
Volume Number	22
Issue Number	6
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1975-12-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Monte Carlo methods Gold Electron emission Silicon Polyethylene X-rays Backscatter Photonics Laboratories Production
Content Type	Text
Resource Type	Article
Subject	Nuclear and High Energy Physics Electrical and Electronic Engineering Nuclear Energy and Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

X-Ray Dose Enhancement

Charge Deposition Profiles near Co60 Irradiated Material Interfaces

Accuracy of Coupled Monte-Carlo/Next-Event-Estimator for Bremsstrahlung Dose Predictions

An Algorithm for Energy Deposition at Interfaces

Diffusion Equation Model for Kilovolt Electron Transport at X-Irradiated Interfaces

An Algorithm for Calculating Dose Profiles in Multi-Layered Devices Using a Personal Computer

Photon Elastic Scattering Simulation: Validation and Improvements to Geant4

Modification of diode X-rays by electron multiple backscatter from anode

Dose Calculations for Si-SiO2Si Layered Structures Irradiated by X Rays and 60Co Gamma Rays

Monte Carlo Analysis of Dose Profiles near Photon Irradiated Material Interfaces

Similar Documents

X-Ray Dose Enhancement

Charge Deposition Profiles near Co60 Irradiated Material Interfaces

Accuracy of Coupled Monte-Carlo/Next-Event-Estimator for Bremsstrahlung Dose Predictions

An Algorithm for Energy Deposition at Interfaces

Diffusion Equation Model for Kilovolt Electron Transport at X-Irradiated Interfaces

An Algorithm for Calculating Dose Profiles in Multi-Layered Devices Using a Personal Computer

Photon Elastic Scattering Simulation: Validation and Improvements to Geant4

Modification of diode X-rays by electron multiple backscatter from anode

Dose Calculations for Si-SiO2Si Layered Structures Irradiated by X Rays and 60Co Gamma Rays

Monte Carlo Analysis of Dose Profiles near Photon Irradiated Material Interfaces