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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Lichuan Jin Huaiwu Zhang Xiaoli Tang Feiming Bai Zhiyong Zhong |
| Copyright Year | 1965 |
| Abstract | The influences of sputtering gas pressure on the high frequency magnetization dynamics properties of sputtered Co2FeAl0.5Si0.5 (CFAS) Heusler alloy thin films have been systematic studied. Results show that the surface roughness, grain size, anisotropy field and dynamic magnetic properties can be tailored by changing sputtering gas pressures. The inhomogeneous linewidth broadening of the sputtered CFAS Heusler thin films is monotonously enhanced with the pressure increasing, similar as with the anisotropy field. A low value intrinsic damping parameter is extracted as 0.0073 with a low sputtering pressure, 1.58 ×10-4 mbar. The intrinsic damping parameter increases monotonously up to 0.0122 with the pressure increasing. The high tunability of the damping constant indicates that controlling the sputtering gas pressure could be an effective method to tune the magnetization dynamics in sputtered CFAS thin film. |
| Sponsorship | IEEE Magnetics Society |
| Starting Page | 1 |
| Ending Page | 4 |
| Page Count | 4 |
| File Size | 906629 |
| File Format | |
| ISSN | 00189464 |
| Volume Number | 50 |
| Issue Number | 1 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Magnetic resonance Sputtering Anisotropic magnetoresistance Damping Metals Perpendicular magnetic anisotropy intrinsic damping constant Co-based Heusler alloy thin films dynamic magnetic property external inhomogeneous broadening ferromagnetic resonance linewidth |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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