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Stable electrical operation of 6h-sic jfets and ics for thousands of hours at 500 c
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Okojie, Robert S. Meredith, Roger D. Spry, David J. Chen, Liang-Yu Neudeck, Philip G. Beheim, Glenn M. Chang, Carl W. Ferrier, Terry L. Krasowski, Michael J. Evans, Laura J. Prokop, Norman F. |
| Copyright Year | 2008 |
| Description | The fabrication and testing of the first semiconductor transistors and small-scale integrated circuits (ICs) to achieve up to 3000 h of stable electrical operation at 500 C in air ambient is reported. These devices are based on an epitaxial 6H-SiC junction field-effect transistor process that successfully integrated high temperature ohmic contacts, dielectric passivation, and ceramic packaging. Important device and circuit parameters exhibited less than 10% of change over the course of the 500 C operational testing. These results establish a new technology foundation for realizing durable 500 C ICs for combustion-engine sensing and control, deep-well drilling, and other harsh-environment applications. |
| File Size | 428109 |
| Page Count | 4 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150022210 |
| Archival Resource Key | ark:/13960/t6f23xs4q |
| Language | English |
| Publisher Date | 2008-05-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Silicon Compounds Fabrication Integrated Circuits Semiconductor Devices Field Effect Transistors Epitaxy Packaging Jfet Durability High Temperature Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
