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Method for providing semiconductors having self-aligned ion implant (Document No: 20110012147)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2011 |
| Description | A method is disclosed that provides a self-aligned nitrogen-implant particularly suited for a Junction Field Effect Transistor (JFET) semiconductor device preferably comprised of a silicon carbide (SiC). This self-aligned nitrogen-implant allows for the realization of durable and stable electrical functionality of high temperature transistors such as JFETs. The method implements the self-aligned nitrogen-implant having predetermined dimensions, at a particular step in the fabrication process, so that the SiC junction field effect transistors are capable of being electrically operating continuously at 500.degree. C. for over 10,000 hours in an air ambient with less than a 10% change in operational transistor parameters. |
| File Size | 2090456 |
| Page Count | 29 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20110012147 |
| Archival Resource Key | ark:/13960/t2f81bn62 |
| Language | English |
| Publisher Date | 2011-05-03 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Fabrication Patents Semiconductor Devices Field Effect Transistors Semiconductors Materials Silicon Carbides Durability High Temperature Transistors Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
