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Transport equations for cad modeling of al(x)ga(1-x)n/gan hemts
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Freeman, Jon C. |
| Copyright Year | 2003 |
| Description | BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially. |
| File Size | 3416032 |
| Page Count | 13 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150012251 |
| Archival Resource Key | ark:/13960/t0kt1ng1b |
| Language | English |
| Publisher Date | 2003-10-28 |
| Access Restriction | Open |
| Subject Keyword | Systems Analysis And Operations Research Electronics And Electrical Engineering Computer Programming And Software Polarization Radio Frequencies Wurtzite Semiconductors Materials Gallium Nitrides Piezoelectricity Mathematical Models Energy Gaps Solid State High Electron Mobility Transistors Transport Theory Computer Aided Design Constitutive Equations Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
