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Silicon technologies adjust to rf applications
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Reinecke Taub, Susan Alterovitz, Samuel A. |
| Copyright Year | 1994 |
| Description | Silicon (Si), although not traditionally the material of choice for RF and microwave applications, has become a serious challenger to other semiconductor technologies for high-frequency applications. Fine-line electron- beam and photolithographic techniques are now capable of fabricating silicon gate sizes as small as 0.1 micron while commonly-available high-resistivity silicon wafers support low-loss microwave transmission lines. These advances, coupled with the recent development of silicon-germanium (SiGe), arm silicon integrated circuits (ICs) with the speed required for increasingly higher-frequency applications. |
| File Size | 24360914 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150022253 |
| Archival Resource Key | ark:/13960/t28964d64 |
| Language | English |
| Publisher Date | 1994-10-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Integrated Circuits Radio Frequencies Gallium Arsenides Microwave Transmission Field Effect Transistors Electrical Resistivity Semiconductors Materials Wafers Hole Mobility Electron Mobility Germanium Silicon Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
