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Surface passivation by quantum exclusion using multiple layers
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 2015 |
| Description | A semiconductor device has a multilayer doping to provide improved passivation by quantum exclusion. The multilayer doping includes at least two doped layers fabricated using MBE methods. The dopant sheet densities in the doped layers need not be the same, but in principle can be selected to be the same sheet densities or to be different sheet densities. The electrically active dopant sheet densities are quite high, reaching more than 1.times.10.sup.14 cm.sup.-2, and locally exceeding 10.sup.22 per cubic centimeter. It has been found that silicon detector devices that have two or more such dopant layers exhibit improved resistance to degradation by UV radiation, at least at wavelengths of 193 nm, as compared to conventional silicon p-on-n devices. |
| File Size | 3979928 |
| Page Count | 59 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20150009345 |
| Archival Resource Key | ark:/13960/t6n064z6q |
| Language | English |
| Publisher Date | 2015-05-05 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Fabrication Patents Semiconductor Devices Exclusion Inventions Molecular Beam Epitaxy Silicon Passivity Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
