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Improved silicon carbide crystals grown from atomically flat surfaces
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Neudeck, Philip G. |
| Copyright Year | 2003 |
| Description | The NASA Glenn Research Center is demonstrating that atomically flat (i.e., step-free) silicon carbide (SiC) surfaces are ideal for realizing greatly improved wide bandgap semiconductor films with lower crystal defect densities. Further development of these improved films could eventually enable harsh-environment electronics beneficial to jet engine and other aerospace and automotive applications, as well as much more efficient and compact power distribution and control. The technique demonstrated could also improve blue-light lasers and light-emitting-diode displays. |
| File Size | 59622 |
| Page Count | 3 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20050214827 |
| Archival Resource Key | ark:/13960/t23c10q8q |
| Language | English |
| Publisher Date | 2003-03-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Defects Semiconductors Materials Lasers Display Devices Silicon Carbides Light Emitting Diodes Energy Gaps Solid State Flat Surfaces Jet Engines Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
