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Low-temperature solid-state phase transformations in 2h silicon carbide
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Powell, J. A. Will, H. A. |
| Copyright Year | 1972 |
| Description | Single crystals of 2H SiC were observed to undergo phase transformations at temperatures as low as 400 C. Some 2H crystals transformed to a structure with one-dimensional disorder along the crystal c axis. Others transformed to a faulted cubic/6H structure. The transformation is time and temperature dependent and is greatly enhanced by dislocations. Observations indicate that the transformation takes place by means of a slip process perpendicular to the c axis. Cubic SiC crystals were observed to undergo a solid state transformation above 1400 C. |
| File Size | 1607463 |
| Page Count | 33 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19720012155 |
| Archival Resource Key | ark:/13960/t7wm62041 |
| Language | English |
| Publisher Date | 1972-03-01 |
| Access Restriction | Open |
| Subject Keyword | Physics, Solid-state Silicon Carbides Single Crystals Solid State Phase Transformations Crystal Dislocations Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
