Loading...
Please wait, while we are loading the content...
Similar Documents
Mis capacitor studies on silicon carbide single crystals
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Kopanski, J. J. |
| Copyright Year | 1990 |
| Description | Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors). |
| File Size | 2132071 |
| Page Count | 45 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19910002242 |
| Archival Resource Key | ark:/13960/t7rn82k12 |
| Language | English |
| Publisher Date | 1990-09-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Stability Tests Capacitance-voltage Characteristics Capacitors Silicon Carbides Spectroscopic Analysis Solid-solid Interfaces Charge Distribution Volt-ampere Characteristics Single Crystals Electrical Resistivity Temperature Effects Mis Semiconductors Electric Field Strength Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
