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Sic-based gas sensor development
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Wu, Q. H. Gray, M. Androjna, D. Hoffman Jr., R. W. Hunter, G. W. Neudeck, P. G. Chen, L.-Y. Liu, C. C. |
| Copyright Year | 2000 |
| Description | Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection. The effects of the geometry of the tin oxide film in a Pd/SnO2/SiC structure will be discussed as well as improvements in packaging SiC-based sensors. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor array for a variety of gases and temperatures. |
| File Size | 505978 |
| Page Count | 10 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20000021223 |
| Archival Resource Key | ark:/13960/t0xq1xz0h |
| Language | English |
| Publisher Date | 2000-01-01 |
| Access Restriction | Open |
| Subject Keyword | Tin Oxides Leakage Fabrication Schottky Diodes Oxide Films Packaging Silicon Carbides Palladium High Temperature Design Analysis Gas Detectors Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
