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Growth of iii-v films by control of mbe growth front stoichiometry
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1992 |
| Description | For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature. |
| File Size | 433081 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19920012792 |
| Archival Resource Key | ark:/13960/t4dn92800 |
| Language | English |
| Publisher Date | 1992-03-10 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Stoichiometry Crystal Lattices Quantum Wells Molecular Beam Epitaxy Indium Compounds Arsenides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
