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Mbe growth technology for high quality strained iii-v layers
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1990 |
| Description | The III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group III and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation of low temperature, and to permit the film to relax to equilibrium. The method of the invention: (1) minimizes starting step density on sample surface; (2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 monolayers at a time); (3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and (4) uses time-resolved RHEED to achieve aspects (1) through (3). |
| File Size | 532617 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19900017369 |
| Archival Resource Key | ark:/13960/t9m37qr03 |
| Language | English |
| Publisher Date | 1990-03-30 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Crystal Growth Stoichiometry Gallium Arsenides Stability Crystal Lattices Molecular Beam Epitaxy Substrates Low Temperature Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
