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Gaas schottky barrier photo-responsive device and method of fabrication
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Leinkram, C. Z. Alcorn, G. E. |
| Copyright Year | 1985 |
| Description | A gallium arsenide photo-responsive device is provided with an intermediate, transparent layer of a refractory metal or alkaline earth metal forming a tenacious bond between a non-hydroscopic oxide layer and a noble metal Schottky barrier layer. The device has a gallium arsenide substrate with a predetermined type conductivity and a gallium arsenide epitaxial layer with the same type conductivity but a lower charge carrier concentration grown on the substrate. The oxide layer is formed to cover the epitaxial layer, and the transparent metal layer followed by the noble metal layer are deposited upon the oxide layer. An interdigitated ohmic contact is then formed upon the noble metal layer. |
| File Size | 428827 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860010679 |
| Archival Resource Key | ark:/13960/t6f23tz94 |
| Language | English |
| Publisher Date | 1985-09-24 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Schottky Diodes Gallium Arsenides Charge Carriers Epitaxy Film Thickness Adhesion Substrates Fabrication Alkaline Earth Metals Vapor Deposition Metal Oxide Semiconductors Photovoltaic Cells Noble Metals Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
