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Pbs-pbse ir detector arrays
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1986 |
| Description | A silicon wafer is provided which does not employ individually bonded leads between the IR sensitive elements and the input stages of multiplexers. The wafer is first coated with lead selenide in a first detector array area and is thereafter coated with lead sulfide within a second detector array area. The described steps result in the direct chemical deposition of lead selenide and lead sulfide upon the silicon wafer to eliminate individual wire bonding, bumping, flip chipping, planar interconnecting methods of connecting detector array elements to silicon chip circuitry, e.g., multiplexers, to enable easy fabrication of very long arrays. The electrode structure employed, produces an increase in the electrical field gradient between the electrodes for a given volume of detector material, relative to conventional electrode configurations. |
| File Size | 523281 |
| Page Count | 6 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_20080008235 |
| Archival Resource Key | ark:/13960/t08w89b7v |
| Language | English |
| Publisher Date | 1986-07-22 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Infrared Detectors Multiplexing Patents Sensitivity Silicon Wafers Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
