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Material growth and characterization for solid state devices (Document No: 19870018090)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Iyer, S. Abul-Fadl, A. Collis, Ward J. |
| Copyright Year | 1987 |
| Description | During this period InGaAs and InGaAsP were grown on (100)InP by liquid phase electroepitaxy (LPEE). Results of the epitaxial growth of InGaAs on sputtered quartz masked substrates are presented. The resulting surface morphology can be related to the current density distribution near the edges of a masked pattern. The quaternary InGaAs was grown with compositions corresponding to 1.3 micron and 1.5 micron emission wavelengths. Growth rates were found to be linearly dependent upon current density, and a strong dependence upon composition was noted. These compositions lie in the miscibility gap region of the alloy phase diagram at the 645 C growth temperature. Growths were performed at 685 C to avoid the miscibility gap. Epilayers were characterized by photoluminescence, X-ray diffraction, secondary ion mass spectrometry, and Hall effect measurements. Aluminum oxide was deposited on silicon and InGaAs substrates for the characterization of this material as an insulator in a field effect transistor structure. It was determined that the results did not warrant further work with the deposition from an aluminum isopropoxide source. A metallographic vapor phase epitaxy system installation is nearing completion for use in hybrid III-V semiconductor epilayer growths. |
| File Size | 1259278 |
| Page Count | 36 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870018090 |
| Archival Resource Key | ark:/13960/t9f52jw40 |
| Language | English |
| Publisher Date | 1987-03-13 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Gallium Arsenides Capacitance-voltage Characteristics Field Effect Transistors Miscibility Gap Insulators Electroepitaxy Hall Effect X Ray Diffraction Substrates Indium Arsenides Liquid Phase Epitaxy Vapor Phase Epitaxy Semiconductors Materials Surface Properties Indium Phosphates Carrier Mobility Current Density Aluminum Oxides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
