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Material growth and characterization for solid state devices (Document No: 19840012333)
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Iyer, S. Abul-Fadl, A. Stefanakos, E. K. Collis, W. J. |
| Copyright Year | 1984 |
| Description | During the reporting period, InGaAs was grown on Fe-doped (semi-insulating) (100) InP substrates by current controlled liquid phase epitaxy (CCLPE) at 640 C and current densities of 2.5A sq/cm to 5 A/sq cm for periods from 5 to 30 minutes. Special efforts were made to reduce the background carrier concentration in the grown layers as much as possible. The best layers exhibited carrier concentrations in the mid-10 to the 15th power/cu cm range and up to 10,900 sq cm/V-sec room temperature mobility. InGaAsP quaternary layers of energy gap corresponding to wavelengths of approximately 1.5 microns and 1.3 microns were grown on (100) InP substrates by CCLPE. In the device fabrication area, work was directed toward processing MISFET's using InGaAs. SiO2, Si3N4 and Al2O3 were deposited by ion beam sputtering, electron beam evaporation and chemical vapor reaction on Si, GaAs, and InGaAs substrates. SiO2 and Si3N4 sputtered layers were found to possess a high density of pinhole defects that precluded capacitance-voltage analysis. Chemical vapor deposited Al2O3 layers on Si, GaAs and InGaAs substrates also exhibited a large number of pinhole defects. This prevented achieving good MIS devices over most of the substrate surface area. |
| File Size | 17681041 |
| Page Count | 57 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19840012333 |
| Archival Resource Key | ark:/13960/t4dn90398 |
| Language | English |
| Publisher Date | 1984-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Gallium Arsenides Field Effect Transistors Carrier Density Solid State Substrates Indium Arsenides Sputtering Defects Fabrication Pinholes Liquid Phase Epitaxy Vapor Deposition Semiconducting Films Ion Plating Semiconductors Materials Silicon Oxides Silicon Nitrides Mis Semiconductors Indium Compounds Carrier Mobility Surface Layers Aluminum Oxides Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
