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Heavy doping effects in high efficiency silicon solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Neugroschel, A. Lindholm, F. A. |
| Copyright Year | 1986 |
| Description | The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon. |
| File Size | 1119115 |
| Page Count | 35 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870015391 |
| Archival Resource Key | ark:/13960/t9w13zb4t |
| Language | English |
| Publisher Date | 1986-01-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Temperature Dependence Bipolar Transistors Doped Crystals Semiconductors Materials Recombination Reactions Space Charge Carrier Transport Solid State Silicon Minority Carriers Emitters Carrier Mobility Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
