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Measurement of minority carrier transport parameters in heavily doped n-type silicon
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Delalamo, J. Swanson, R. M. |
| Copyright Year | 1985 |
| Description | Measurement of minority transport parameters in heavily doped silicon is covered. The basic transport equations were used to define two independent parameters. Use of special vertical and lateral transistor test devices permitted the measurement of both parameters. Prior studies were normalized to show excellent agreement over the heavy doping region. |
| File Size | 152087 |
| Page Count | 8 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860019900 |
| Archival Resource Key | ark:/13960/t1qg3kq6w |
| Language | English |
| Publisher Date | 1985-06-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Bipolar Transistors Doped Crystals Recombination Reactions Predictions Silicon Minority Carriers Transport Theory Parameterization Steady State Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
