NDLI: Chemistry of mos-lsi radiation hardening

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Chemistry of mos-lsi radiation hardening

Content Provider	NASA Technical Reports Server (NTRS)
Author	Grunthaner, P.
Copyright Year	1985
Description	The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.
File Size	3350154
Page Count	89
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19860012165
Archival Resource Key	ark:/13960/t7rn81t85
Language	English
Publisher Date	1985-08-15
Access Restriction	Open
Subject Keyword	Inorganic And Physical Chemistry Radiation Hardening Temperature Dependence Metal Oxide Semiconductors Large Scale Integration Amorphous Materials Radiation Dosage Radiation Damage Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Technical Report

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