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A study of charged particles/radiation damage to vlsi device materials
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Okyere, John G. |
| Copyright Year | 1987 |
| Description | Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets. |
| File Size | 3961048 |
| Page Count | 138 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19880004136 |
| Archival Resource Key | ark:/13960/t6n061n8d |
| Language | English |
| Publisher Date | 1987-09-01 |
| Access Restriction | Open |
| Subject Keyword | Electronics And Electrical Engineering Radiation Hardening Radiation Effects Metal Oxide Semiconductors Electrical Properties Field Effect Transistors Aerospace Environments Random Access Memory Irradiation Very Large Scale Integration Long Term Effects Charged Particles Cmos Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
