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Radiation hardening of mos devices by boron. [for stabilizing gate threshold potential of field effect device
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Copyright Year | 1974 |
| Description | A technique is described for radiation hardening of MOS devices and specifically for stabilizing the gate threshold potential at room temperature of a radiation subjected MOS field-effect device with a semiconductor substrate, an insulating layer of oxide on the substrate, and a gate electrode disposed on the insulating layer. The boron is introduced within a layer of the oxide of about 100 A-300 A thickness immediately adjacent the semiconductor-insulator interface. The concentration of boron in the oxide layer is preferably maintained on the order of 10 to the 18th power atoms/cu cm. The technique serves to reduce and substantially annihilate radiation induced positive gate charge accumulations. |
| File Size | 416138 |
| Page Count | 5 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19740012216 |
| Archival Resource Key | ark:/13960/t47q3rp0h |
| Language | English |
| Publisher Date | 1974-03-26 |
| Access Restriction | Open |
| Subject Keyword | Radiation Hardening Radiation Effects Boron Threshold Gates Metal Oxide Semiconductors Field Effect Transistors Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Patent |
