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The effect of internal stresses on solar cell efficiency
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Weizer, Victor G. |
| Copyright Year | 1987 |
| Description | Diffusion induced stresses in silicon are shown to result in large localized changes in the minority carrier mobility which in turn have a significant effect on cell output. Evidence is given that both compressive and tensile stresses can be generated in either the emitter or the base region. Tensile stresses appear to be much more effective in altering cell performance. While most stress related effects appear to degrade cell efficiency, this is not always the case. Evidence is presented showing that arsenic induced stresses can result in emitter characteristics comparable to those found in the MINP cell without requiring a high degree of surface passivation. |
| File Size | 430978 |
| Page Count | 11 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19870016997 |
| Archival Resource Key | ark:/13960/t6p032h5r |
| Language | English |
| Publisher Date | 1987-06-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Solar Cells Degradation Tensile Stress Arsenic Compressing Silicon Emitters Passivity Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
