Loading...
Please wait, while we are loading the content...
Similar Documents
Carbon films grown from plasma on iii-v semiconductors
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Pouch, J. J. Warner, J. D. Liu, D. C. |
| Copyright Year | 1985 |
| Description | Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies. |
| File Size | 3195515 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19860002668 |
| Archival Resource Key | ark:/13960/t87h6gb0w |
| Language | English |
| Publisher Date | 1985-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Methane Gallium Arsenides Semiconducting Films Plasma Etching Ion Sources N-type Semiconductors P-type Semiconductors Energy Gaps Solid State Carbon Sputtering Butanes Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
