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Plasma deposited diamondlike carbon on gaas and inp
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Pouch, J. J. Warner, J. D. Lanford, W. A. Alterovitz, S. A. Liu, D. C. |
| Copyright Year | 1984 |
| Description | The properties of diamond like carbon films grown by RF flow discharge 30 kHz plasma using methane are reported. The Cls XPS line shape of films showed localized hybrid carbon bonds as low as 40 to as high as 95 percent. Infrared spectroscopy and N(15) nuclear reaction profiling data indicated 35 to 42 percent hydrogen, depending inversely on deposition temperature. The deposition rate of films on Si falls off exponentially with substrate temperature, and nucleation does not occur above 200 C on GaAs and InP. Optical data of the films showed bandgap values of 2.0 to 2.4 eV increasing monotonically with CH4 flow rate. |
| File Size | 1198137 |
| Page Count | 15 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19850002536 |
| Archival Resource Key | ark:/13960/t82k18n53 |
| Language | English |
| Publisher Date | 1984-01-01 |
| Access Restriction | Open |
| Subject Keyword | Solid-state Physics Methane Thin Films Infrared Spectroscopy Plasma Physics Gallium Arsenides Indium Phosphides Refraction Hydrocarbons Ion Sources Carbon Deposition Nuclear Reactions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
