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Deposition of reactively ion beam sputtered silicon nitride coatings
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Grill, A. |
| Copyright Year | 1982 |
| Description | An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target. |
| File Size | 620717 |
| Page Count | 12 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820022525 |
| Archival Resource Key | ark:/13960/t23c0w00t |
| Language | English |
| Publisher Date | 1982-08-01 |
| Access Restriction | Open |
| Subject Keyword | Nonmetallic Materials Auger Spectroscopy Silicon Nitrides Electron Spectroscopy Coatings Argon Deposition Sputtering Ion Beams Interferometry Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
