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Ion beam sputter deposited diamond like films
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Rutledge, S. K. Banks, B. A. |
| Copyright Year | 1982 |
| Description | A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1. |
| File Size | 2524592 |
| Page Count | 18 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19820020569 |
| Archival Resource Key | ark:/13960/t6935nv64 |
| Language | English |
| Publisher Date | 1982-01-01 |
| Access Restriction | Open |
| Subject Keyword | Nonmetallic Materials Thin Films Ion Irradiation Electrical Resistivity Optical Properties Diamonds Argon Carbon Deposition Sputtering Substrates Ion Beams Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Article |
