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Development of high temperature gallium phosphide rectifiers
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Keune, D. L. Craford, M. G. |
| Copyright Year | 1972 |
| Description | Large area high performance, GaP rectifiers were fabricated by means of Zn diffusion into vapor phase epitaxial GaP. Devices with an active area of 0.01 sq cm typically exhibit forward voltages of 3 volts for a bias current of 1 ampere and have reverse breakdown voltages of 300 volts for temperatures from 27 C to 400 C. Typical device reverse saturation current at a reverse bias of 150 volts is less than 10 to the minus 9th power amp at 27 C and less than 0.000050 amp at 400 C. |
| File Size | 4949538 |
| Page Count | 57 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19720023093 |
| Archival Resource Key | ark:/13960/t8tb5w43s |
| Language | English |
| Publisher Date | 1972-09-01 |
| Access Restriction | Open |
| Subject Keyword | Physics, Solid-state Gallium Phosphides Semiconductor Devices Systems Engineering Epitaxy Rectifiers High Temperature Environments Performance Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
