NDLI: Aging behavior of au-based ohmic contacts to gaas

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Aging behavior of au-based ohmic contacts to gaas

Content Provider	NASA Technical Reports Server (NTRS)
Author	Fatemi, Navid S.
Copyright Year	1989
Description	Gold based alloys, commonly used as ohmic contacts for solar cells, are known to react readily with GaAs. It is shown that the contact interaction with the underlying GaAs can continue even at room temperature upon aging, altering both the electrical characteristics of the contacts and the nearby pn junction. Au-Ge-Ni as-deposited (no heat-treatment) contacts made to thin emitter (0.15 microns) GaAs diodes have shown severe shunting of the pn junction upon aging for several months at room temperature. The heat-treated contacts, despite showing degradation in contact resistance, did not affect the underlying pn junction. Au-Zn-Au contacts to p-GaAs emitter (0.2 microns) diodes, however, showed slight improvement in contact resistance upon 200 C isothermal annealing for several months, without degrading the pn junction. The effect of aging on electrical characteristics of the as-deposited and heat-treated contacts and the nearby pn junction, as well as on the surface morphology of the contacts are presented.
File Size	4668338
Page Count	12
File Format	PDF
Alternate Webpage(s)	http://archive.org/details/NASA_NTRS_Archive_19890015356
Archival Resource Key	ark:/13960/t21c6wd58
Language	English
Publisher Date	1989-04-01
Access Restriction	Open
Subject Keyword	Energy Production And Conversion Solar Cells Annealing Gallium Arsenides Heat Treatment Gold Alloys Ohms Law Chemical Reactions Diodes Degradation Germanium Nickel Aging Metallurgy Deposition Room Temperature P-n Junctions Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science
Content Type	Text
Resource Type	Article

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