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Studies of silicon p-n junction solar cells
| Content Provider | NASA Technical Reports Server (NTRS) |
|---|---|
| Author | Neugroschel, A. Lindholm, F. A. |
| Copyright Year | 1979 |
| Description | To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications. |
| File Size | 7168530 |
| Page Count | 178 |
| File Format | |
| Alternate Webpage(s) | http://archive.org/details/NASA_NTRS_Archive_19800011329 |
| Archival Resource Key | ark:/13960/t6d26qz0c |
| Language | English |
| Publisher Date | 1979-12-01 |
| Access Restriction | Open |
| Subject Keyword | Energy Production And Conversion Power Conditioning Solar Cells Electric Potential Metal Oxide Semiconductors Doped Crystals Silicon Energy Gaps Solid State Current Density P-n Junctions Energy Conversion Efficiency Ntrs Nasa Technical Reports Server (ntrs) Nasa Technical Reports Server Aerodynamics Aircraft Aerospace Engineering Aerospace Aeronautic Space Science |
| Content Type | Text |
| Resource Type | Technical Report |
